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Integrated Color Photodetectors in 40-nm Standard CMOS Technology

本站小编 Free考研/2020-05-25


Author(s): Cong, J (Cong, Jia); Yan, D (Yan, Dong); Tang, JL (Tang, Jiling); Guo, WL (Guo, Weilian); Mao, XR (Mao, Xurui)
Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 31 Issue: 24 Pages: 1979-1982 DOI: 10.1109/LPT.2019.2952204 Published: DEC 15 2019
Abstract: For the further integration of receivers in multi-color visible light communication systems, a novel color photodetector (PD) was designed and fabricated by using a 40 nm standard complementary metal oxide semiconductor (CMOS) process without any process modifications. The PD consists of CMOS photodiode and two-dimensional (2D) polysilicon subwavelength grating above the photodiode. The 2D polysilicon grating is controlled in structural parameters to realize color filtering, based on guided-mode resonance, for the first time in a standard CMOS process. Here three kinds of color PDs were designed to respond to the three primary colors. The measured results demonstrate that the color PDs exhibit wavelength selectivity in the visible range (400-700 nm) and the maximum peaks in the spectral response curves of them are at 660 nm (red), 585 nm (green) and 465 nm (blue), respectively. In addition, the added 2D polysilicon grating almost does not reduce the responsivity of the photodiodes.
Accession Number: WOS:000516533100020
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
cong, jia 0000-0003-3526-499X
Yan, Dong 0000-0002-2231-7725
Mao, X. R. 0000-0002-5261-8369
ISSN: 1041-1135
eISSN: 1941-0174
Full Text: https://ieeexplore.ieee.org/document/8894092
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