Author(s): Ni, WJ (Ni, Weijiang); Wang, XL (Wang, Xiaoliang); Xu, ML (Xu, Miaoling); Li, MS (Li, Mingshan); Feng, C (Feng, Chun); Xiao, HL (Xiao, Hongling); Jiang, LJ (Jiang, Lijuan); Li, W (Li, Wei); Wang, Q (Wang, Quan)
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 67 Issue: 3 Pages: 1071-1076 DOI: 10.1109/TED.2020.2966775 Published: MAR 2020
Abstract: Silicon carbide MOSFET has been commercialized for many years. Its performance is still improving especially for high-frequency application. High-frequency figure-of-merit (HF-FOM) R-ON*C-GD and R-ON*Q(GD) were used for a comprehensive evaluation of the performance of MOSFET. In this article, SiC planar MOSFETs with different p-body designs were comparatively studied. A new planar MOSFET with buffered gate and thick central oxide gate structure (TCOX-MOS) was proposed to further improve the gate oxide electric field in OFF-state and HF-FOM. Compare to the conventional planar MOSFET (C-MOS), the maximum gate oxide electric field, gate-drain charge, and HF-FOM (R-ON*Q(GD)) of TCOX-MOS are 32%, 83%, and 84% lower, respectively. Furthermore, TCOX-MOS shows less short-channel effects by better channel shielding structure. The results show that TCOX-MOS is a more attractive device structure.
Accession Number: WOS:000519593800045
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Xu, Miaoling 0000-0003-1344-0315
Ni, Weijiang 0000-0002-4423-5384
ISSN: 0018-9383
eISSN: 1557-9646
Full Text: https://ieeexplore.ieee.org/document/8989957