Author(s): Cui, SN (Cui, Su-Ning); Jiang, DW (Jiang, Dong-Wei); Sun, J (Sun, Ju); Jia, QX (Jia, Qing-Xuan); Li, N (Li, Nong); Zhang, X (Zhang, Xuan); Li, Y (Li, Yong); Chang, FR (Chang, Fa-Ran); Wang, GW (Wang, Guo-Wei); Xu, YQ (Xu, Ying-Qiang); Niu, ZC (Niu, Zhi-Chuan)
Source: CHINESE PHYSICS B Volume: 29 Issue: 4 Article Number: 048502 DOI: 10.1088/1674-1056/ab773c Published: MAR 2020
Abstract: The eight-band k.p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5 mu m, and the best composition of M-structure in this type of device is calculated theoretically. In addition, we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device. The results show that the modest active region doping temperature (Be: 760 degrees C) can improve the quantum efficiency of the device with the best performance, while excessive doping (Be: > 760 degrees C) is not conducive to improving the photo response. With the best designed structure and an appropriate doping concentration, a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688 omega .cm(2), corresponding to a maximum detectivity of 7.35 x 10(11)cm . Hz(1/2)/W.
Accession Number: WOS:000523411800001
ISSN: 1674-1056
eISSN: 1741-4199
Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab773c