Author(s): Li, XL (Li, Xiuli); Peng, LZ (Peng, Linzhi); Liu, Z (Liu, Zhi); Liu, XQ (Liu, Xiangquan); Zheng, J (Zheng, Jun); Zuo, YH (Zuo, Yuhua); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen)
Source: OPTICS LETTERS Volume: 45 Issue: 6 Pages: 1358-1361 DOI: 10.1364/OL.388011 Published: MAR 15 2020
Abstract: A high-power germanium photodetector is designed and fabricated using a cold-wall ultrahigh vacuum chemical vapor deposition. A back-to-back dual-absorption structure improves high-power characteristics by reducing the spacecharge effect. Compared to a typical p-i-n photodetector, the saturated photocurrent of the back-to-back dual-absorption photodetector is improved from 16.2 to 21.3 mA at -3 V. At a bias voltage of -1 V, the dark current is 1.31 mu A. The optical responsivities are 0.31 and 0.52 A/W at 1550 and 1310 nm, respectively. The 3 dB bandwidth of 4.14 GHz is achieved at -3V. Theoretically, the 3 dB bandwidth can be further optimized in future device fabrication. (C) 2020 Optical Society of America
Accession Number: WOS:000522846400019
PubMed ID: 32163965
ISSN: 0146-9592
eISSN: 1539-4794
Full Text: https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-6-1358