Author(s): Wang, SY (Wang, Suyuan); Wu, Q (Wu, Qiang); Zheng, J (Zheng, Jun); Zhang, B (Zhang, Bin); Huang, S (Huang, Song); Jia, ZX (Jia, Zixi); Yao, JH (Yao, Jianghong); Zhou, QJ (Zhou, Qingjun); Yang, L (Yang, Li); Xu, JJ (Xu, Jingjun); Cheng, BW (Cheng, Buwen)
Source: APPLIED SURFACE SCIENCE Volume: 508 Article Number: 145308 DOI: 10.1016/j.apsusc.2020.145308 Published: APR 1 2020
Abstract: Si-based field emitters with high and stable current densities have gained increasing attention owing to their relevant compatibility with other silicon-based microelectronic and photonic devices. Currently, well-aligned Ge nanostructure arrays can be used in fabrication of Si-based field emitters with excellent performance. In this study, large-area well-aligned Ge nanoisland arrays are induced by femtosecond laser (120 fs, 800 nm, 1 kHz). Scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), Raman analyses, and X-ray photoelectron spectroscopy (XPS) reveal that well-aligned Ge nanoisland arrays with good quality. Field emission (FE) measurements indicate Ge nanoisland arrays with high emission current densities and good stability. Overall, the excellent FE properties of the proposed Ge nanoisland arrays will make them potential for applications in high-performance field emitters integrated with Si nanodevices.
Accession Number: WOS:000516818700147
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Wu, Qiang B-4749-2012 0000-0003-3189-2219
ISSN: 0169-4332
eISSN: 1873-5584
Full Text: https://www.sciencedirect.com/science/article/pii/S0169433220300647?via%3Dihub