Author(s): Ma, XL (Ma, Xiaolei); Jiang, XW (Jiang, Xiangwei); Li, Y (Li, Yuan); Chen, JZ (Chen, Jiezhi)
Source: APPLIED PHYSICS EXPRESS Volume: 13 Issue: 2 Article Number: 021004 DOI: 10.35848/1882-0786/ab6f2a Published: FEB 1 2020
Abstract: We report the physical origins of Schottky-barrier height (SBH) modulations at the interface of germanium (Ge) and monolayer transition metal dichalcogenides (TMDs) through ab initio calculations. The effects of surface passivation with hydrogen or fluorine as well as interfacial layer (IL) engineering using hexagonal boron nitride (h-BN) or graphene are discussed. H-/F-passivation can change the intrinsic contact of Ge and TMDs into n- and p-type contacts, respectively. More importantly, an ideal p-type contact with vanished SBH could be achieved by using h-BN as the IL. This approach holds promises to the integration of TMDs on Ge-based devices. (C) 2020 The Japan Society of Applied Physics.
Accession Number: WOS:000519699200004
ISSN: 1882-0778
eISSN: 1882-0786
Full Text: https://iopscience.iop.org/article/10.35848/1882-0786/ab6f2a