Author(s): Zhang, YH (Zhang, Yuheng); Liang, F (Liang, Feng); Zhao, DG (Zhao, Degang); Jiang, DS (Jiang, Desheng); Liu, ZS (Liu, Zongshun); Zhu, JJ (Zhu, Jianjun); Yang, J (Yang, Jing); Liu, ST (Liu, Shuangtao)
Source: NANOSCALE RESEARCH LETTERS Volume: 15 Issue: 1 Article Number: 38 DOI: 10.1186/s11671-020-3263-9 Published: FEB 10 2020
Abstract: The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate Mg-Ga, but also can passivate carbon impurities in Mg-doped p-GaN.
Accession Number: WOS:000520485000002
PubMed ID: 32040646
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Zhang, Yuheng 0000-0003-2572-8615
ISSN: 1931-7573
eISSN: 1556-276X
Full Text: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-020-3263-9