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Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dot
本站小编 Free考研/2020-05-25
Author(s): Chen, H (Chen, Hao); Zhuo, ZY (Zhuo, Zhiyao); Huang, JH (Huang, Junhui); Dou, XM (Dou, Xiuming); He, XW (He, Xiaowu); Ding, K (Ding, Kun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan); Jiang, DS (Jiang, Desheng); Sun, BQ (Sun, Baoquan)
Source: APPLIED PHYSICS LETTERS Volume: 116 Issue: 8 Article Number: 082101 DOI: 10.1063/1.5142482 Published: FEB 24 2020
Abstract: Semiconductor self-assembled single quantum dots (QDs) provide a promising solid-state light source for single photons and entangled photons. The structural asymmetry in QDs results in fine structure splitting (FSS) of exciton and biexciton emission lines. Here, we propose a method to study QD symmetry by measuring the difference in two different polarized lifetimes of QD excitonic emission lines under applied stress. The method can be reasonably correlated with the direct FSS measurement. Actually, due to the limitation of the resolution of the spectrometer, the zero value of FSS is difficult to measure. Instead, the lifetime measurement is an effective method to judge the symmetry condition of single QDs.
Accession Number: WOS:000519607100001
ISSN: 0003-6951
eISSN: 1077-3118
Full Text: https://aip.scitation.org/doi/10.1063/1.5142482