Author(s): Gao, YF (Gao, Yuan-Fei); Pang, SM (Pang, Si-Ming); Bao, HH (Bao, Hai-Hong); Peng, XY (Peng, Xian-Yun); Sun, YJ (Sun, Yu-Jia); Ren, SL (Ren, Shu-Liang); Meng, D (Meng, Da); Zhang, J (Zhang, Jun)
Source: PHYSICAL REVIEW MATERIALS Volume: 4 Issue: 3 Article Number: 034002 DOI: 10.1103/PhysRevMaterials.4.034002 Published: MAR 17 2020
Abstract: Vertically oriented layered In2Se3 nanoplates have been grown by chemical vapor deposition. It is demonstrated that the growth is subject to the species of substrates because the morphologies of nanoplates grown on mica and SiO2/Si substrates are quite different. We obtained vertical In2Se3 nanosheets on SiO2/Si and sapphire substrates with surface dangling bonds, while we obtained horizontal In2Se3 nanosheets on mica without surface dangling bonds. A continuum model based on surface diffusion and a moving boundary is developed to describe the intermediate states of the steps and the edge. The dangling-bond-assisted heterogeneous nucleation mechanism is proposed to describe the growth of vertical In2Se3 nanoplates: difficult diffusion of In2Se3 adatoms on dangling-bonded substrate surface due to large interface energy between In2Se3 adatoms and SiO2/Si (and sapphire) substrates results in In2Se3 seeds growing perpendicularly to the substrate; then vertical nanoplates inherit the growth direction of In2Se3 seeds. This work paves the way for the growth of monodisperse vertical two-dimensional nanoplates on SiO2/Si substrates, and it expands their utilizations from conventional lateral structured devices to nonplanar vertical electronic and optoelectronic devices.
Accession Number: WOS:000519996900001
ISSN: 2475-9953
Full Text: https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.4.034002