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20-nm consecutive discrete tuning range semiconductor laser with 125 GHz channel spacing based on sl

本站小编 Free考研/2020-05-25


Author(s): Dong, FX (Dong, Fengxin); Liu, AJ (Liu, Anjin); Ma, PJ (Ma, Pijie); Wang, MJ (Wang, Mingjin); Zheng, WH (Zheng, Wanhua)
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 35 Issue: 4 Article Number: 045018 DOI: 10.1088/1361-6641/ab4c8f Published: APR 2020
Abstract: A widely tunable semiconductor laser based on slotted surface grating is presented. This regrowth-free tunable semiconductor laser is fabricated by contact i-line lithography rather than electron beam lithography. The fabrication process of this tunable laser is similar to Fabry-Perot lasers, which can simplify the fabrication. The tunable semiconductor laser achieves a 20-nm consecutive discrete tuning range with a 125 GHz channel spacing at 25 degrees C, which is, to the best of our knowledge, the highest consecutive discrete tuning range in such a channel spacing for this kind of four-section tunable semiconductor laser fabricated without electron beam lithography. This tunable semiconductor laser can be widely used in the applications such as wavelength-division-multiplexing systems and optical routing systems.
Accession Number: WOS:000520432700001
ISSN: 0268-1242
eISSN: 1361-6641
Full Text: https://iopscience.iop.org/article/10.1088/1361-6641/ab4c8f
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