Author(s): Wu, ST (Wu, Shaoteng); Wu, SF (Wu, Shaofei); Song, WQ (Song, Wenqing); Wang, LC (Wang, Liancheng); Yi, XY (Yi, Xiaoyan); Liu, ZQ (Liu, Zhiqiang); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)
Source: NANOTECHNOLOGY Volume: 31 Issue: 14 Article Number: 145713 DOI: 10.1088/1361-6528/ab6479 Published: APR 3 2020
Abstract: Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal structure of III-V nanowires along its growth axis. However, few results on relevant nitride NWs have been reported. In this study, we demonstrate the growth of epitaxial kinked wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW arrays under the oxygen rich condition using hydride vapour-liquid-solid vapour phase epitaxy (VLS-HVPE). The typical GaN crystal includes WZ and ZB phases throughout the whole NW structure. A detailed structural analysis indicates that a stacking faults free zone was occasionally observed near the NW tips and in the relatively long kinked & x3008;11-23 & x3009; directions segments (>200 nm). Furthermore, some NWs (<5%) develop phase boundaries, resulting in kinking and crystal phase evolution. A layer-by-layer growth mode was proposed to explain the crystal phase evolution along the phase boundaries. This study provides new insights into the controlled growth of wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW.
Accession Number: WOS:000520192200001
PubMed ID: 31860878
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Wang, Liancheng 0000-0002-2100-3089
wu, shaoteng 0000-0003-4658-5051
ISSN: 0957-4484
eISSN: 1361-6528
Full Text: https://iopscience.iop.org/article/10.1088/1361-6528/ab6479