Author(s): Yang, XX (Yang, Xiuxia); Cheng, Z (Cheng, Zhe); Yu, ZG (Yu, Zhiguo); Jia, LF (Jia, Lifang); Zhang, L (Zhang, Lian); Zhang, Y (Zhang, Yun)
Source: ELECTRONICS Volume: 9 Issue: 2 Article Number: 282 DOI: 10.3390/electronics9020282 Published: FEB 2020
Abstract: AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches exhibit the lower on-state resistance (R-ON) than that with the conventional plane one. It can be explained that the anode trenches made the Schottky metal directly contact to the 2DEG at the sidewall of the AlGaN/GaN interface, removing the AlGaN barrier layer in the conventional plane anode. In addition, the R-ON of the SBDs with circular trenches is smaller than that of the SBDs with stripe ones. Furthermore, the R-ON decreases with the increasing rows of anode trenches, which can be attributed to the increased contact area between the Schottky metal and the 2DEG. For the reverse characteristics, the anode trenches do not lead to performance degradation. The fabricated devices exhibit the low reverse current (I-R, I-R < 1 mu A/mm), and the breakdown voltage (V-BK) remains unchanged with different anode geometries.
Accession Number: WOS:000518412200082
eISSN: 2079-9292
Full Text: https://www.mdpi.com/2079-9292/9/2/282