Author(s): Xiong, LY (Xiong, Luyao); Liu, B (Liu, Bin); Liu, DD (Liu, Dandan); Lv, LF (Lv, Longfeng); Hou, YB (Hou, Yanbing); Shen, JL (Shen, Jingling); Zhang, B (Zhang, Bo)
Source: NANOSCALE Volume: 12 Issue: 5 Pages: 3343-3350 DOI: 10.1039/c9nr08826a Published: FEB 7 2020
Abstract: A terahertz read-only in situ electrically-erasable rewritable photo-memory device based on a perovskite:Ag (perovskite with Ag nanoparticles added)/SnO2/PEDOT:PSS hetero-junction structure is reported. Under low optical excitation, considerable terahertz amplitude modulation in a perovskite:Ag/PEDOT:PSS hybrid structure was achieved. When a SnO2 nanoparticle film was inserted between the perovskite and PEDOT:PSS layer, the attenuation of the terahertz signal was weaker than that of the perovskite:Ag/PEDOT:PSS hybrid structure; however, the SnO2 nanoparticle film considerably prolonged the recovery time of the modulated terahertz wave in air after photo-excitation was stopped. In addition, when bias voltages were applied to the perovskite:Ag/PEDOT:PSS and perovskite:Ag/SnO2/PEDOT:PSS hybrid structures, respectively, the terahertz signals recovered rapidly for both structures. Consequently, the photo-memory functionality was achieved based on a perovskite:Ag/SnO2/PEDOT:PSS hybrid structure with an in situ method for erasing stored information.
Accession Number: WOS:000516533300045
PubMed ID: 31984404
ISSN: 2040-3364
eISSN: 2040-3372
Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/NR/C9NR08826A