Author(s): Zhu, PF (Zhu, Peng-Fei); Ye, XG (Ye, Xing-Guo); Fang, JZ (Fang, Jing-Zhi); Xiang, PZ (Xiang, Peng-Zhan); Li, RR (Li, Rong-Rong); Xu, DY (Xu, Dai-Yao); Wei, ZM (Wei, Zhongming); Mei, JW (Mei, Jia-Wei); Liu, S (Liu, Song); Yu, DP (Yu, Da-Peng); Liao, ZM (Liao, Zhi-Min)
Source: PHYSICAL REVIEW B Volume: 101 Issue: 7 Article Number: 075425 DOI: 10.1103/PhysRevB.101.075425 Published: FEB 24 2020
Abstract: We report the magnetotransport properties of MnBi2Te4 thin flakes through gate modulation at low temperatures. Under in-plane magnetic field, a large negative magnetoresistance (MR) maintains up to 10 T, which is related to the suppression of spin scattering when the magnetic order is gradually forced into the ferromagnetic (FM) state. Under perpendicular magnetic field, a steep resistance decrease is observed around similar to 3 T, corresponding to the transition from an antiferromagnetic (AFM) to a canted AFM (CAFM) state. Due to the net Berry curvature, a notable anomalous Hall effect is observed and can be effectively tuned by gate voltages. The enhanced Hall coefficient would emerge under high magnetic fields when the Fermi level is close to the charge neutral point. Moreover, a transition from negative to positive MR is obtained when increasing the magnetic field. A large linear positive MR occurs around similar to 8 T, corresponding to the CAFM-FM transition. The nonsaturated positive MR here may have a similar mechanism to the one in Weyl semimetals, revealing the strong combination between topology and magnetism in MnBi2Te4.
Accession Number: WOS:000515633600005
ISSN: 2469-9950
eISSN: 2469-9969
Full Text: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.101.075425