Author(s): Dong, HY (Dong, Haiyun); Zhang, Y (Zhang, Yang); Cui, LJ (Cui, Lijie); Guan, M (Guan, Min); Li, YY (Li, Yiyang); Zhu, ZP (Zhu, Zhanping); Wang, BQ (Wang, Baoqiang); Zeng, YP (Zeng, Yiping)
Source: JOURNAL OF CRYSTAL GROWTH Volume: 535 Article Number: 125377 DOI: 10.1016/j.jcrysgro.2019.125377 Published: APR 1 2020
Abstract: 0.8 to 1 mu m Si and Be doped InSb were grown by molecular beam epitaxy. X-ray diffraction and atomic force microscope indicate that growth temperature below 340 degrees C severely results in dislocations and undulating surface. Silicon shows amphoteric doping nature in InSb at higher growth or Si cell temperatures, for the calculation result reveals it needed more energy to take the place of Sb. ECV measurement demonstrates that InSb/In0.9Al0.1Sb superlattice buffer layer can effectively inhibit Be dopant from diffusing to the substrate in the 420 degrees C InSb, with which both the doping level and crystalline quality are significantly improved. 790-870 degrees C Be doped InSb transfer from p- to n-type during the Hall measurement temperature increasing from 77 K to 330 K. The transition temperature of each sample is linearly correlated to the Be doping temperature, which is theoretically interpreted by the excitation mechanism and carrier transportation principles inside InSb.
Accession Number: WOS:000518210400010
ISSN: 0022-0248
eISSN: 1873-5002
Full Text: https://www.sciencedirect.com/science/article/pii/S0022024819305925?via%3Dihub