Author(s): Chen, P (Chen, Ping); Park, YJ (Park, Young Jae); Liu, YS (Liu, Yuh-Shiuan); Detchprohm, T (Detchprohm, Theeradetch); Yoder, PD (Yoder, P. Douglas); Shen, SC (Shen, Shyh-Chiang); Dupuis, RD (Dupuis, Russell D.)
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 49 Issue: 4 Pages: 2326-2331 DOI: 10.1007/s11664-019-07932-x Published: APR 2020
Abstract: The thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping rate from a lower temperature for InGaN quantum wells (QWs) to a higher one for AlGaN quantum barriers (QBs) is intentionally changed from 1.0 degrees C/s to 4.0 degrees C/s. Atomic force microscopy images show that the surface morphology of InGaN QWs, which is improved by a thermal effect when the growth temperature rises to the set value of the AlGaN QBs, varies with different temperature ramping rates. The results of stimulated emission indicate that the threshold pumping power density of MQWs is decreased with increasing temperature ramping rate from 1.0 degrees C/s to 3.0 degrees C/s and then slightly increased when the ramping rate is 4.0 degrees C/s. This phenomenon is believed to result from the thermal degradation effect during the temperature ramp step. A long-time high-temperature annealing will reduce the density of indium-rich microstructures as well as the corresponding localized state density, which is assumed to contribute to the radiative recombination in the InGaN QWs. Given the great difference between optimal growth temperatures for AlGaN and InGaN layers, a higher ramping rate would be more appropriate for the growth of ultraviolet AlGaN/InGaN MQWs.
Accession Number: WOS:000515822800003
ISSN: 0361-5235
eISSN: 1543-186X
Full Text: https://link.springer.com/article/10.1007%2Fs11664-019-07932-x