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Two-dimensional Janus-In2STe/InSe heterostructure with direct gap and staggered band alignment

本站小编 Free考研/2020-05-25


Author(s): Li, XP (Li, Xueping); Zhai, BX (Zhai, Baoxing); Song, XH (Song, Xiaohui); Yan, Y (Yan, Yong); Li, JB (Li, Jingbo); Xia, CX (Xia, Congxin)
Source: APPLIED SURFACE SCIENCE Volume: 509 Article Number: 145317 DOI: 10.1016/j.apsusc.2020.145317 Published: APR 15 2020
Abstract: Experimental fabrications of two-dimensional (2D) Janus materials are drawing considerable attention due to their asymmetrical structure and versatile applications in various fields. Here, we design a novel 2D Janus-In2STe/InSe van der Waals (vdW) heterostructure and theoretically demonstrate its dynamic stability, electronic structures, work function and optical absorption, considering the effects of stacking configurations, interlayer spacing and external electric field. The Janus-In2STe/InSe vdW heterostructure presents the intrinsic natures of direct band structures (similar to 1.23 eV), staggered band alignment and superb optical absorption(similar to 10(5)) under ultraviolet zone. Intriguingly, the vertical strain and electric field can induce the transformation of direct-indirect band structure and staggered-straddling band alignment. All findings provides the physical mechanism of Janus-In2STe/InSe vdW heterostructure, and indicates that Janus InSe-based vdW heterostructure has promising applications under ultraviolet fields.
Accession Number: WOS:000514827600156
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Yan, Yong 0000-0003-4283-5324
ISSN: 0169-4332
eISSN: 1873-5584
Full Text: https://www.sciencedirect.com/science/article/pii/S0169433220300738?via%3Dihub
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