Author(s): Zhao, Y (Zhao, Yue); Wang, N (Wang, Nan); Yu, K (Yu, Kai); Zhang, XM (Zhang, Xiaoming); Li, XL (Li, Xiuli); Zheng, J (Zheng, Jun); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Li, CB (Li, Chuanbo)
Source: CHINESE PHYSICS B Volume: 28 Issue: 12 Article Number: 128501 DOI: 10.1088/1674-1056/ab4e84 Published: NOV 2019
Abstract: An investigation of germanium-tin (GeSn) on silicon p-i-n photodetectors with a high-quality Ge0.94Sn0.06 absorbing layer is reported. The GeSn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 mu m. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm(2) was achieved at room temperature. Furthermore, the GeSn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 mu m. This work has great importance in silicon-based short-wave infrared detection.
Accession Number: WOS:000516547200001
ISSN: 1674-1056
eISSN: 1741-4199
Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab4e84