Author(s): Li, WJ (Li, Weijiang); Zhang, X (Zhang, Xiang); Zhao, J (Zhao, Jie); Yan, JC (Yan, Jianchang); Liu, ZQ (Liu, Zhiqiang); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Wei, TB (Wei, Tongbo)
Source: JOURNAL OF APPLIED PHYSICS Volume: 127 Issue: 1 Article Number: 015302 DOI: 10.1063/1.5125978 Published: JAN 7 2020
Abstract: We demonstrated the growth of high-quality and compressive-stressed single-crystal c-GaN on ((2) over bar 01) beta-Ga2O3 utilizing metal organic vapor phase epitaxy. Rectification behavior of the n-GaN/n-Ga2O3 isotype heterojunction was observed. Valence and conduction band offsets were determined to be 1.625 eV +/- 0.07 eV and -0.165 eV +/- 0.07 eV, respectively, confirming a type-II heterojunction due to the polarization effect. The extracted forward (0.702 V) and reverse (0.178 V) turn-on voltages could be ascribed to the band bending (0.695 eV) effect and the conduction band offset, respectively. The present work may lead to a deeper understanding of the GaN/beta-Ga2O3 heterojunction and play a guiding role in the development of the GaN-based vertical structure light-emitting diodes on beta-Ga2O3. Published under license by AIP Publishing.
Accession Number: WOS:000515651000020
ISSN: 0021-8979
eISSN: 1089-7550
Full Text: https://aip.scitation.org/doi/10.1063/1.5125978