Author(s): Ran, WH (Ran, Wenhao); Wang, LL (Wang, Lili); Zhao, SF (Zhao, Shufang); Wang, DP (Wang, Depeng); Yin, RY (Yin, Ruiyang); Lou, Z (Lou, Zheng); Shen, GZ (Shen, Guozhen)
Source: ADVANCED MATERIALS Article Number: 1908419 DOI: 10.1002/adma.201908419 Early Access Date: FEB 2020
Abstract: Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art low-dimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA) system that boosts photosensitivity by several orders of magnitude by introducting nanowire field effect transistors (FETs), resulting in a peak photosensitivity of 7.6 x 10(4) under an illumination of 1342 nm, is presented. Consequently, high-contrast imaging of IR light is obtained on the flexible IRDA arrays. The image information can be then trained and recognized by an artificial neural network for higher image-recognition efficiency. This work provides a new perspective for developing high-performance IR imaging systems, and is expected to undoubtedly enlighten future work on artificial intelligence and biorobotic systems.
Accession Number: WOS:000516609300001
PubMed ID: 32104957
ISSN: 0935-9648
eISSN: 1521-4095
Full Text: https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201908419