Author(s): Hu, YF (Hu, Yifeng); Qiu, QQ (Qiu, Qingqian); Zhu, XQ (Zhu, Xiaoqin); Lai, TS (Lai, Tianshu)
Source: APPLIED SURFACE SCIENCE Volume: 505 Article Number: 144337 DOI: 10.1016/j.apsusc.2019.144337 Published: MAR 1 2020
Abstract: The property of Sb phase change thin film is investigated systematically. Sb thin film has an appropriate crystallization temperature (similar to 165 degrees C) and data retention (110 degrees C for 10 year). Irradiated by laser pulse, the Sb thin film can achieve the crystallization operation within 6.05 ns. The monoclinic structure is confirmed by X-Ray Diffraction and the bond vibration mode of A7 phase is demonstrated by Raman scattering spectrum. With the crystallization, the band gap becomes narrow and the polycrystalline structure gradually forms. The Sb-based phase change memory cells are prepared. An ultrafast programing operation (similar to 5 ns) and good endurance of 1.4 x 10(7) cycles are achieved. The results reveal that Sb thin film has promising potential in phase change memory application.
Accession Number: WOS:000510846500034
ISSN: 0169-4332
eISSN: 1873-5584
Full Text: https://www.sciencedirect.com/science/article/pii/S0169433219331538?via%3Dihub