Author(s): Zhang, XD (Zhang, Xiao-Di); Han, WH (Han, Wei-Hua); Liu, W (Liu, Wen); Zhao, XS (Zhao, Xiao-Song); Guo, YY (Guo, Yang-Yan); Yang, C (Yang, Chong); Chen, JD (Chen, Jun-Dong); Yang, FH (Yang, Fu-Hua)
Source: CHINESE PHYSICS B Volume: 28 Issue: 12 Article Number: 127302 DOI: 10.1088/1674-1056/ab527a Published: NOV 2019
Abstract: We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
Accession Number: WOS:000516546000001
ISSN: 1674-1056
eISSN: 1741-4199
Full Test: https://iopscience.iop.org/article/10.1088/1674-1056/ab527a