Author(s): Yang, GH (Yang, Guanhua); Shao, Y (Shao, Yan); Niu, JB (Niu, Jiebin); Ma, XL (Ma, Xiaolei); Lu, CY (Lu, Congyan); Wei, W (Wei, Wei); Chuai, XC (Chuai, Xichen); Wang, JW (Wang, Jiawei); Cao, JC (Cao, Jingchen); Huang, H (Huang, Hao); Xu, GW (Xu, Guangwei); Shi, XW (Shi, Xuewen); Ji, ZY (Ji, Zhuoyu); Lu, ND (Lu, Nianduan); Geng, D (Geng, Di); Qi, J (Qi, Jing); Cao, Y (Cao, Yun); Liu, ZL (Liu, Zhongliu); Liu, LW (Liu, Liwei); Huang, Y (Huang, Yuan); Liao, L (Liao, Lei); Dang, WQ (Dang, Weiqi); Zhang, ZW (Zhang, Zhengwei); Liu, Y (Liu, Yuan); Duan, XD (Duan, Xidong); Chen, JZ (Chen, Jiezhi); Fan, ZQ (Fan, Zhiqiang); Jiang, XW (Jiang, Xiangwei); Wang, YL (Wang, Yeliang); Li, L (Li, Ling); Gao, HJ (Gao, Hong-Jun); Duan, XF (Duan, Xiangfeng); Liu, M (Liu, Ming)
Source: NATURE COMMUNICATIONS Volume: 11 Issue: 1 Article Number: 659 DOI: 10.1038/s41467-020-14383-0 Published: JAN 31 2020
Abstract: In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
Though metallic edge states in monolayer transition metal dichalcogenide have been observed before, how these states contribute to charge transport remains unclear. Here, the authors quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing a dominated non-linear edge transport at low temperature, indicating possible Luttinger liquid behavior.
Accession Number: WOS:000513245600041
PubMed ID: 32005802
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Ma, Xiaolei 0000-0001-9303-0521
ISSN: 2041-1723
Full Test: https://www.nature.com/articles/s41467-020-14383-0