Author(s): Li, J (Li, Jing); Yang, C (Yang, Chao); Liu, L (Liu, Lei); Cao, HC (Cao, Haicheng); Lin, S (Lin, Shan); Xi, X (Xi, Xin); Li, XD (Li, Xiaodong); Ma, ZH (Ma, Zhanhong); Wang, KY (Wang, Kaiyou); Patane, A (Patane, Amalia); Zhao, LX (Zhao, Lixia)
Source: ADVANCED OPTICAL MATERIALS Article Number: 1901276 DOI: 10.1002/adom.201901276 Early Access Date: FEB 2020
Abstract: The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches toward enhanced performance, miniaturization, and integration beyond current Si-based technologies. This work reports on the design and realization of high-performance InGaN-based resonant cavity photodiodes with high-reflectivity lateral porous GaN distributed Bragg reflectors. The well-controlled porosification of GaN on the 2-inch wafers enables design and fabrication of optical components, unlocking the potential of nitride semiconductors for several applications. These resonant-cavity-enhanced photodiodes, which have a 12 nm-thick optically active region, exhibit a high responsivity (approximate to 0.1 A W-1) to blue-light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible light at well-defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability, and low-power consumption for VLC, with potential for integration of different functionalities, that is, light emission and detection, on a single chip without additional light filters.
Accession Number: WOS:000513647800001
ISSN: 2195-1071
Full Test: https://onlinelibrary.wiley.com/doi/full/10.1002/adom.201901276