Author(s): Liang, DD (Liang, Dongdong); Wei, TB (Wei, Tongbo); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)
Source: NANO ENERGY Volume: 69 Article Number: 104463 DOI: 10.1016/j.nanoen.2020.104463 Published: MAR 2020
Abstract: In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials opens a new application space for nitride-based devices, including optoelectronic and power electronic applications. Sp(2)-bonded 2D materials with hexagonal in-plane lattice arrangements and weakly bonded layers can relax the strict requirements of the lattice and thermal mismatches between nitrides and heteroepitaxial substrates. Furthermore, it also allows transferring nitride devices to arbitrary substrates due to weak vdW interaction between 2D materials and nitride overlying layers. In this review, we will focus on the recent progress in the growth of nitrides film and devices on different kinds of 2D materials. The fundamental challenges and the nucleation mechanism on 2D materials are presented by introducing a high density of surface defects. The different functional applications of 2D materials on nitride materials and devices are also discussed in detail. Through the paper, we exhibit the up-to-date state in this field of research and present future perspectives regarding the development of nitride on 2D materials.
Accession Number: WOS:000513814400049
ISSN: 2211-2855
eISSN: 2211-3282
Full Test: https://www.sciencedirect.com/science/article/pii/S2211285520300197?via%3Dihub