文献详情
Magneto-Memristive Switching in a 2D Layer Antiferromagnet
文献类型：期刊
期刊名称：Advanced materials (Deerfield Beach, Fla.)
年：2020
卷：32
期：2
页码：e1905433
ISSN：1521-4095
关键词：2D magnetism,chromium triiodide,memristive switching,van der Waals heterostructures
所属部门：物理学系
摘要：Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale juncti ...More
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI3 , a natural layer antiferromagnet, is reported here. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field and electric-field switching of magnetization even in multilayer samples.? 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. ...Hide

DOI：10.1002/adma.201905433
百度学术：Magneto-Memristive Switching in a 2D Layer Antiferromagnet
语言：外文
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