ChenJH
美国马里兰大学（2009）
低维纳米电子材料和器件的物性研究
Email：jianhao.chen81@gmail.com
http://icqm.pku.edu.cn/yw/directory/faculty/237454.htm
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Home >>Directory >>Faculty
Dr. Jian-Hao Chen 陈剑豪
Associate Professor
Contact Info
Office：Physics Building W667, 物理楼西667
Tel：86-
Email：chenjianhao@pku.edu.cn
Personal Homepage：http://www.phy.pku.edu.cn/~jhchen/index.html
Education
Degree
Year
Major
Institution
Ph.D.
2004-2009
Physics
University of Maryland at College Park, MD, USA
B.S.
2000-2004
Physics
Zhejiang University, Hangzhou, China
Professional Appointments
Year
Position
Institution
2013-present
Associate Professor
ICQM, Peking University
2010-2013
Postdoctoral Fellow
University of California at Berkeley and Lawrence
Berkeley National Laboratory
2009-2010
Postdoctoral Fellow
University of Maryland at College Park
Research Interests
1. Quantum Transport
2. In-situ Electrical Transport in Ultra-High Vacuum Environment
3. Low dimensional quantum materials
4. Nano-Electronics
Honors and Awards
1. Recruitment Program of Global Experts (Junior Program) of China, Organization Department of the CPC Central Committee (2012)
2. Prize Fellowship, University of Maryland at College Park (2004-2006)
3. Exchange Student Scholarship, The University of Hong Kong and Zhejiang University (2003)
4. University Prize Scholarships (three consecutive years), Zhejiang University (2000-2003)
5. Freshman Prize Scholarships, Zhejiang University (2000)
6. Member, Chu Kochen Honors Colleges (Now Qiushi Honors College, top 3% out of 3500 STEM students), Zhejiang University (2000-2004)
Selected Publications
1. Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe,Jian-Hao Chen* and Xi Lin*, “Nonlinear transport of graphene in the quantum Hall regime”, 2D Materials4, 015003 (2016)
2.J. -H. Chen,L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer, “Tunable Kondo Effect in Graphene with Defects”,Nature Physics7, 535(2011).Times Cited: 225
3.J. -H. Chen,W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams,“Defect Scattering in Graphene”,Physical Review Letters102, 236805 (2009).Times Cited: 454
4.J. -H. Chen,C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2”,Nature Nanotechnology3, 206 (2008). Times Cited: 1828
5.J. -H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, M. Ishigami, “Charged Impurity Scattering in Graphene”,Nature Physics4, 377 (2008). Times Cited: 1118
6.J. -H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie and A. Zettl, “Growth of a Linear Defect in Graphene for Gate-Tunable Valley Filtering”,Physical Review B89, 121407(R) (2014).Times Cited: 43
Open Positions
1, Onetotwo PH.D students each year.
2, One post-doctor position open
5th & 6th Floor, Physics Building, Peking University No. 209 Chengfu Road, Haidian District Beijing, 100871, China 地址：北京市海淀区成府路209号北京大学物理学院西楼五、六层 邮编：100871
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