盖峥 教授 教育背景：北京大学博士（1995年）
研究方向：表面物理（凝聚态物理与材料物理研究所）
联系方式：电话 **，传真 **，Email zgai_at_pku.edu.cn
个人主页：http://www.phy.pku.edu.cn/english/people/gaizheng.htm
办公地点：
Zheng Gai
Department of Physics, Peking University
Beijing 100871, P. R. China
Phone: 86-
Fax: 86-
zgai@phy.pku.edu.cn
RESEARCH INTEREST
Physics of nanostructured materialsEXPERIENCE
Magnetic semiconductors
Spintronics
Surface Structure and Dynamics
Scanning Probe Microscope Motivated and challenging Post doc and students are wanted !!!
Professor (November 2000 – Present)EDUCATION
Physics Department, Peking University, Beijing, P. R. China
Visiting Scientist (Dec 2000 – November 2003)
Low-Dimensional Materials by Design Group, Condensed Matter Sciences Division, Oak Ridge National Laboratory, USA.
? Growth and magnetic properties of low dimensional materials
? Magnetic semiconductors
Associate Professor (August 1997 – November 2000)
Physics Department, Peking University, Beijing, P. R. China.
? structures and properties of high index semiconductor surfaces
? dynamics of semiconductor surfaces
? metal-semiconductor interfaces
Visiting Scientist (July 1998 – September 1999)
Sakurai Lab, Institute for Materials Research, Tohoku University, Japan.
? structures and properties of high index semiconductor surfaces
? metal-semiconductor interfaces
Visiting Scientist (March 1997 – May 1997)
Department of Material Science, State University of New York, Stony Brook, USA.
? assembling an UHV-STM system for Professor F. Jona
? training one Ph.D. student
Postdoctoral Fellow (July 1995 – July 1997)
Physics Department, Peking University, Beijing, P. R. China.
? structures and properties of high index semiconductor surfaces
? dynamics of semiconductor surfaces
? metal-semiconductor interfaces
Ph.D., Surface Science, Peking University (1995), Beijing, P.R.ChinaHONOR AND AWARDS
B.S., Condensed Matter Physics, Peking University (1989), Beijing, P. R. China
Best Poster Award, DOE-NEST Workshop, Gatlinburg, TN, USA, 2003
Outstanding Doctoral Thesis Award, Education Ministry, P. R. China, 1999
Award for Progress in Science and Technology (2nd grade), Education Ministry, P. R. China, 1998
Hu Gangfu Physics Award, Chinese Association of Physics, 1997
Award for Progress in Science and Technology (1st grade), Education Ministry, P. R. China, 1996
Outstanding Doctoral Thesis Award, Chinese Vacuum Society, 1995
SELECTED PUBLICATIONS (32 out of 52)
"Growth and magnetism of metallic thin films and multilayers by pulsed laser deposition”, J. Shen, Zheng Gai, and J. Kirschner, Surf. Sci. Rep. (invited review paper).
“Electronic Stability of Magnetic Fe/Co Superlattices with Monoatomic Layer Alternation”, G.A. Farnan, C. L. Fu, Z. Gai, M. Krcmar, A.P. Baddorf, Z.Y. Zhang, and J. Shen, Phys. Rev. Lett. 91, xxxxx (2003).
"High-yield solvothermal formation of magnetic FePt alloy nanowires", Z. Zhang, D.A. Blom, Zheng Gai, J. Thompson, J. Shen, and S. Dai, J. Am. Chem. Soc. 125, 7528 (2003).
"Self-assembly of nanometer-scale magnetic dots with narrow size distributions on an insulating substrate", Zheng Gai, Biao Wu, J. P. Pierce, G.A. Farnan, D.J. Shu, M. Wang, Zhenyu Zhang, and J. Shen, Phys. Rev. Lett. 89, 235502 (2002).
"Growth of low dimensional magnetic nanostructures on an insulator", Zheng Gai, G.A. Farnan, J. Pierce, and J. Shen, Appl. Phys. Lett. 81, 742, (2002).
" Nanofaceting of unit cells and temperature dependence surface reconstruction and morphology of Si(105)and (103)", R.G. Zhao, Zheng Gai, Wenjie Li, Jinlong Jiang, Y. Fujikawa, T. Sakurai, and W.S. Yang, Surf. Sci. 517, 98 (2002).
"Monte Carlo simulations of interacting magnetic nanoparticles”, H.K. Lee, T.C. Shulthess, D.P. Landau, G. Brown, J. Pierce, Z. Gai, G. Farnan, and J. Shen, J. Appl. Phys. 91, 6926 (2002).
"A major stable surface of silicon: Si(20 4 23)", Zheng Gai, R.G. Zhao, Wenjie Li, Y. Fujikawa, T. Sakurai, W.S. Yang, Phys. Rev. B 64, 125201 (2001).
"Si(313) 12 x 1: Another metallic stable surface of silicon having a complex reconstructed layer ", Zheng Gai, R.G. Zhao, T. Sakurai, W.S. Yang, Phys. Rev. B 63, 085301 (2001).
"Atomic structure of the Si(112)7×1-In surface", Zheng Gai, W.S. Yang, T. Sakurai, and R.G. Zhao, Phys. Rev. B 61, XXXX (2000).
"Thermal stability and structure of the equilibrium clean Si(103) surface", Zheng Gai, W.S. Yang, R.G. Zhao, and T. Sakurai, Phys. Rev. B 59, 13003 (1999).
"Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium", Zheng Gai, W.S. Yang, T. Sakurai, and R.G. Zhao, Phys. Rev. B 59, 13009 (1999).
"Macroscopic and nanoscale faceting of germanium surfaces", Zheng Gai, W.S. Yang, R.G. Zhao, and T. Sakurai, Phys. Rev. B 59, 15230 (1999).
"Adsorption of glycine on Cu(001) and related step faceting and bunching", Xueying Zhao, Zheng Gai, R.G. Zhao, W.S. Yang, and T. Sakurai, Surf. Sci. Lett. 424, L347 (1999).
"Scanning tunneling microscopy investigation of the Si(103)1X1-In surface", Zheng Gai, W.S. Yang, Q.-K. Xue, T. Sakurai, and R.G. Zhao, Surf. Rev. Lett. 6, 405 (1999).
"Atomic structure of the Ge(313) surface", Zheng Gai, R.G. Zhao, and W.S. Yang, Phys. Rev. B 58, R4223 (1998).
"Spontaneous breaking of nanowires between a STM tip and the Pb(110) surface", Zheng Gai, Xiaowei Li, Bo Gao, R.G. Zhao, W.S. Yang, and J.W.M. Frenken, Phys. Rev. B 58, 2185 (1998).
"Atomic structure of the Ge(15 3 23) surface", Zheng Gai, Xiaowei Li, R.G. Zhao, and W.S. Yang, Phys. Rev. B 57, R15060 (1998).
"Faceting and nanoscale faceting of Ge(hhl) surfaces around (113)", Zheng Gai, R.G. Zhao, Xiaowei Li, and W.S. Yang, Phys. Rev. B 58, 4572 (1998).
"Atomic structure of the Ge(101) surface", Zheng Gai, R.G. Zhao, and W.S. Yang, Phys. Rev. B 57, R6795 (1998).
"Atomic structure of the domain walls of the discommensurate phases in Ge(111)/Ga", Zheng Gai, Bo Gao, Hang Ji, R.G. Zhao, and W.S. Yang, Surf. Rev. Lett. 5, 175 (1998).
"Atomic structure of the Ge(001)7X5.5-Ga surface", Zheng Gai, R.G. Zhao, Hang Ji, and W.S. Yang, Surf. Sci. Lett. 405, L484 (1998).
"Atomic structure of high-index Ge surfaces consisting of periodic nanoscale facets", Zheng Gai, R.G. Zhao, Hang Ji, Xiaowei Li, and W.S. Yang, Phys. Rev. B 56, 12308 (1997).
"Migration of subsurface self-interstitial atoms of the Ge(113) surface and the energy barrier", Zheng Gai, R.G. Zhao, and W.S. Yang, Phys. Rev. B 56, 12303 (1997).
"Surface reconstructions and faceting of the Ga/Ge(113) system", Zheng Gai, R.G. Zhao, Bo Gao, Hang Ji, and W.S. Yang, Surf. Sci. 383, 1 (1997).
"A comparative study of the thermal stability of the (103) surface of group-III- metal/group-IV-semiconductor systems", Hang Ji, Xiaowei Li, R.G. Zhao, Zheng Gai, and W.S. Yang, Surf. Sci. 384, 276 (1997).
"Surface structure of the (3X1) and (3X2) reconstruction of Ge(113)", Zheng Gai, Hang Ji, Bo Gao, R.G. Zhao, and W.S. Yang, Phys. Rev. B 54, 8593 (1996).
"Adatom diffusion on Ge(111) and the corresponding activation energy barrier", Zheng Gai, Hongbin Yu, and W.S. Yang, Phys. Rev. B 53, 13547 (1996).
"Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111)", Zheng Gai, R.G. Zhao, Yi He, Hang Ji, Chuan Hu, and W.S. Yang, Phys. Rev. B 53, 1539 (1996).
"Room temperature measurement of conductance quantization in metallic ballistic quantum point contacts", Zheng Gai, Yi He, Hongbin Yu, and W.S. Yang, Phys. Rev. B 53, 1042 (1996).
"Application of moiré fringes in investigations of subsurface imperfections", Zheng Gai, Yi He, Xiaowei Li, J.F. Jia, and W.S. Yang, Surf. Sci. 365, 96 (1996).
"{310} faceting of the Ge(001)2X1 surface induced by indium", Zheng Gai, Hang Ji, Yi He, Chuan Hu, R.G. Zhao, and W.S. Yang, Surf. Sci. Lett. 338, L851 (1995).
