关键词: 硒化锑/
电子传输层/
薄膜太阳电池/
wx-AMPS
English Abstract
Simulation and optimal design of antimony selenide thin film solar cells
Cao Yu1,Zhu Xin-Yun1,
Chen Han-Bo2,
Wang Chang-Gang1,
Zhang Xin-Tong2,
Hou Bing-Dong2,
Shen Ming-Ren1,
Zhou Jing2
1. Key Laboratory of Modern Power System Simulation and Control & Renewable Energy Technology, Ministry of Education(Northeast Electric Power University), Jilin 132012, China;
2. School of Chemical Engineering, Northeast Electric Power University, Jilin 132012, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant No. 51772049) and the Jilin Scientific and Technological Development Program, China (Grant No. 20170520159JH).Received Date:21 September 2018
Accepted Date:01 November 2018
Published Online:20 December 2019
Abstract:In this paper, the wx-AMPS simulation software is used to model and simulate the antimony selenide (Sb2Se3) thin film solar cells. Three different electron transport layer models (CdS, ZnO and SnO2) are applied to the Sb2Se3 solar cells, and the conversion efficiencies of which are obtained to be 7.35%, 7.48% and 6.62% respectively. It can be seen that the application of CdS and ZnO can achieve a better device performance. Then, the electric affinity of the electron transport layer (χe-ETL) is adjusted from 3.8 eV to 4.8 eV to study the effect of the energy band structure change on the solar cell performance. The results show that the conversion efficiency of the Sb2Se3 solar cell first increases and then decreases with the increase of the χe-ETL. The lower χe-ETL creates a barrier at the interface between the electron transport layer and the Sb2Se3 layer, which can be considered as a high resistance layer, resulting in the increase of series resistance. On the other hand, when the χe-ETL is higher than 4.6 eV, the electric field of the electron transport layer can be reversed, leading to the accumulation of the photon-generated carriers at the interface between the transparent conductive film and the electron transport layer, which could also hinder the carrier transport and increase the series resistance. At the same time, the electric field of Sb2Se3 layer becomes weak with the value of χe-ETL increasing according to the band structure of the Sb2Se3 solar cell, leading to the increase of the carriers' recombination and the reduction of the cell parallel resistance. As a result, too high or too low χe-ETL can lower the FF value and cause the device performance to degrade. Thus, to maintain high device performance, from 4.0 eV to 4.4 eV is a suitable range for the χe-ETL of the Sb2Se3 solar cell. Moreover, based on the optimization of the χe-ETL, the enhancement of the Sb2Se3 layer material quality can further improve the solar cell performance. In the case of removing the defect states of the Sb2Se3 layer, the conversion efficiency of the Sb2Se3 solar cell with a thickness of 0.6 μm is significantly increased from 7.87% to 12.15%. Further increasing the thickness of the solar cell to 3 μm, the conversion efficiency can be as high as 16.55% (Jsc=34.88 mA/cm2, Voc=0.59 V, FF=80.40%). The simulation results show that the Sb2Se3 thin film solar cells can obtain excellent performance with simple device structure and have many potential applications.
Keywords: antimony selenide/
electron transport layer/
thin film solar cell/
wx-AMPS
