关键词: 互补金属氧化物半导体/
电子轰击增益/
微光成像/
紫外探测
English Abstract
High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection
Liu Hu-Lin,Wang Xing,
Tian Jin-Shou,
Sai Xiao-Feng,
Wei Yong-Lin,
Wen Wen-Long,
Wang Jun-Feng,
Xu Xiang-Yan,
Wang Chao,
Lu Yu,
He Kai,
Chen Ping,
Xin Li-Wei
1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China
Fund Project:Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11304374) and the Innovatioan Foundation of the Chinese Academy of Sciences (Grant No. CXJJ-16S015).Received Date:27 July 2017
Accepted Date:30 August 2017
Published Online:05 January 2018
Abstract:High resolution and high sensitive low light level imaging sensors are crucial in many applications such as astronomical observation, high energy physics, night vision and remote sensing. The electron bombarded complementary metal oxide semiconductor (EBCMOS) sensor is a novel imager in which very high gain can be produced by hitting the semiconductor with high voltage without any noise generation. In addition, it can process high-definition image with kHz frame rate. These advatages make the EBCMOS an ideal device for ultrafast single-photon imgaing. In this article, we present an EBCMOS sensor working in the ultraviolet range by combing the technology of vacuum photocathode and back illuminated CMOS together. This EBCMOS sensor can realize very high resolution in 40 mlx light illumination environment. The achieved spatial resolution is 25 lp/mm (line paris per millimeter) when the electric field intensity is 5000 V/mm. The liner relation between electric field intensity and the resolution indicates that much better perofromance can be achieved if the electric field intensity increases to a much higher value. The EBCMOS sensor developed in this paper can be directly applied to UV weak light detection, moreover it will provide a good reference for further developing the visible and near infrared sensitive EBCMOS sensors.
Keywords: complementary metal oxide semiconductor/
electron bombareded gain/
low light level imaging/
UV detection
