关键词: 六角氮化硼/
电阻转变/
忆阻器/
神经形态
English Abstract
Two-dimensional hexagonal boron nitride based memristor
Wu Quan-Tan1,2,Shi Tuo1,2,
Zhao Xiao-Long1,
Zhang Xu-Meng1,2,
Wu Fa-Cai1,
Cao Rong-Rong1,2,
Long Shi-Bing1,2,
Lü Hang-Bing1,2,
Liu Qi1,
Liu Ming1,2
1.Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2.University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61404164, 61574166, 61522408), the National Key RD Program of China (Grant Nos. 2017YFB0405603, 2016YFA0201803), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDPB0603).Received Date:26 August 2017
Accepted Date:13 September 2017
Published Online:05 November 2017
Abstract:Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.
Keywords: hexagonal boron nitride/
resistive switching/
memristor/
neuromorphic
