关键词: 过渡金属硫族化合物/
晶体管/
迁移率/
逻辑集成
English Abstract
Logical integration device for two-dimensional semiconductor transition metal sulfide
Li Wei-Sheng,Zhou Jian,
Wang Han-Chen,
Wang Shu-Xian,
Yu Zhi-Hao,
Li Song-Lin,
Shi Yi,
Wang Xin-Ran
1.National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Fund Project:Project support by the National Natural Science Foundation of China (Grant Nos. 61325020, 61521001) and the National Basic Research Program of China (Grant Nos. 2013CBA01604, 2015CB351900).Received Date:11 September 2017
Accepted Date:03 October 2017
Published Online:05 November 2017
Abstract:The semiconductor industry has experienced exponential growth for more than 50 years, following the Moore's Law. However, traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect. As an alternative, two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit, and demonstrate high electron mobility, mutable bandgap, and topological singularity, which will hopefully give birth to revolutionary changes in electronics. The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate, since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility. Here in this paper, we review the most recent progress of two-dimensional TMDC and achievements in logic integration, especially focusing on the following key aspects:charge transport, carrier mobility, contact resistance and integration. We also point out the emerging directions for further research and development.
Keywords: transition metal dichalcogenides/
field-effect transistors/
mobility/
logic integration
