关键词: 碲锌镉/
像素探测器/
射线能谱响应
English Abstract
Investigation on electrical transport properties of CdZnTe pixel detector
Nan Rui-Hua1,2,Wang Peng-Fei1,
Jian Zeng-Yun1,
Li Xiao-Juan1
1.Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China;
2.State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 51502234, 51602242) and the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University, China (Grant No. SKLSP201410).Received Date:04 April 2017
Accepted Date:20 July 2017
Published Online:05 October 2017
Abstract:Semi-insulating cadmium zinc telluride (CdZnTe or CZT) is an excellent material candidate for fabricating room-temperature nuclear radiation semiconductor detectors due to its high resistivity and good carrier transport behaviors. It is widely used in nuclear security, nuclear medicine, space science, etc. Nevertheless, the traditional CdZnTe planar detector is subjected to the effect of hole trailing on its hole transport characteristic, where its energy resolution and the photoelectric peak efficiency both decrease, and thus deteriorating the detection performance. In order to eliminate the effect of hole capture, the electrode with pixel structure for CdZnTe detector is designed for detecting single carriers that are only electrons.In this paper, a 10 mm10 mm2 mm wafer cut from an In doped Cd0.9Zn0.1Te single crystal, grown by the modified vertical Bridgman method, is employed to fabricate a 44 CdZnTe pixel detector, which is composed of 16 small pixel units with an area of 2 mm2 mm. Each of the pixel units is linked up with ASIC multichannel preamplifier and shaping amplifier by flip chip technology. Finally, the signal is treated by an integrated sensing chip. In the first case, the electrical properties and carrier transport properties of CdZnTe pixel detector are characterized by current-voltage (I-V) measurement via an Agilent 4155C semiconductor parameter analyzer and ray energy spectrum response via a standard Multi Channel Analyzer 6560 spectra measurement system, respectively. In the second case, the differences between CdZnTe planar detector and 44 pixel detector in the detection performance are discussed in detail. The results indicate that the bulk resistivity of CdZnTe pixel detector is determined to be about 1.7310 cm by a linear fit of I-V curve. The maximum leakage current of a single pixel is less than 2.2 nA for a bias voltage of 100 V. Furthermore, the carrier transport behaviors are evaluated with the mobility-lifetime product for electron in CdZnTe detector, which is 5.4110-4 cm2V-1 estimated by ray energy spectroscopy response under various bias voltages from 50 to 300 V at room temperature. The energy resolutions of the two CdZnTe detectors can reflect the ability of them to distinguish different energy gays during operation. The best energy resolution of a single pixel in CdZnTe pixel detector for 241Am@59.5 keV ray increases up to 5.78% under a 300 V bias voltage, whereas that of CdZnTe planar detector is only 6.85% in the same conditions. As a consequence, the detection performance of 44 CdZnTe pixel detector is better than that of the planar detector.
Keywords: cadmium zinc telluride/
pixel detector/
gamma-ray energy spectroscopy response
