关键词: 焦平面/
锑化铟/
结构应力
English Abstract
Structural model of InSb IRFPAs including underfill curing process
Zhang Xiao-Ling1,Si Le-Fei2,
Meng Qing-Duan1,3,
Lü Yan-Qiu3,
Si Jun-Jie3
1.School of Information Engineering, Henan University of Science and Technology, Luoyang 471023, China;
2.Henan Quality Polytechnic, Pingdingshan 467000, China;
3.Academy Key Laboratory of Science and Technology on Infrared Detector, China Airborne Missile Academy, Luoyang 471009, China
Fund Project:Project supported by the Young Scientists Fund of the National Natural Science Foundation of China（Grant No. 61505048) and the Aero Science Foundation of China（Grant No. 20152442001).Received Date:26 August 2016
Accepted Date:30 September 2016
Published Online:05 January 2017
Abstract:InSb infrared focal plane array(IRFPA) detector, active in 3-5 m range, has been widely used in military fields. Higher fracture probability appearing in InSb infrared focal plane arrays(IRFPAs) subjected to thermal shock test, restricts its final yield. In order to analyze and optimize the structure of InSb IRFPAs, it is necessary to create the three-dimensional structural model of InSb IRFPAs, which is employed to estimate its strain distribution appearing in the different fabricating processes. In this paper, the curing model of underfill is described by its volume contraction percentage combined with the elastic modulus of the completely cured underfill. Thus, both the von Mises stress and the Z-components of strain accumulated in the curing process of underfill are calculated. When InSb IRFPAs is naturally cooled to room temperature from the curing temperature of underfill, the Z-component of strain distribution appearing on the top surface of InSb IRFPAs is obtained with our structural model, which is identical to the deformation distribution on the top surface of InSb IRFPAs measured at room temperature. In the following thermal shock simulation, we find that the maximal von Mises stress appears at 100 K and the maximal Z-component of strain appears at 150 K, these two temperature points are located in the second half of the thermal shock process, these results indicate that the fracture of InSb chip happens more easily in liquid nitrogen shock test. This inference is consistent with the fact appearing in liquid nitrogen shock test. All these findings suggest that the proposed model is suitable to estimate the deformation distribution of InSb IRFPAs and its changing rule in its different fabricating stages.
Keywords: infrared focal plane arrays/
InSb/
structural stress
