关键词: V族二维材料/
第一性原理计算/
表面修饰/
电子结构
English Abstract
Effects of surface regulation on monolayers SbAs and BiSb
Yuan Jun-Hui,Xie Qing-Xing,
Yu Nian-Nian,
Wang Jia-Fu
1.School of Science, Wuhan University of Technology, Wuhan 430070, China
Fund Project:Project supported by the National Natural Science Foundation of China(Grant No. 11504281) and the Fundamental Research Funds for the Central Universities, China(Grant No. 2016-zy-067).Received Date:28 May 2016
Accepted Date:14 July 2016
Published Online:05 November 2016
Abstract:Using the first principle calculation based on the density functional theory, we systematically investigate the stabilities and the structural and electronic structures of fully hydrogenated and fully fluorinated SbAs and BiSb. The results show that the SbAs and BiSb transform the buckled structure into quasi-planar structure after being fully hydrogenated or low-buckled structure after being fully fluorinated. Stability studies show that both the SbAs and BiSb structures（intrinsic, full hydrogenated, and fully fluorinated) are highly stable, and thus likely to be obtained in experiment. The electronic structure study shows that both SbAs and BiSb turn from wide band gap semiconductors into narrow direct-gap semiconductors after being fully hydrogenated and fully fluorinated, meanwhile the band structures still have good linear dispersion. Based on further analyses of the electronic structures of quasi-planar or low-buckled SbAs and BiSb, the reasons for the changes of band structures are revealed. Calculations show that the fX-SbAs（X=H, F) films on h-BN substrate can maintain the direct band gap characteristics because of the weak coupling between them, indicating that they may have great applications in the field of optoelectronic devices in the future.
Keywords: two-dimensional materials of pnictogens/
first principle calculation/
surface regulation/
electronic structure
