关键词: ZnCdO量子阱/
荧光光谱/
激光分子束外延/
量子限制效应
English Abstract
Structural and photoluminescence characteristics of ZnCdO/ZnO single quantum well
Yi You-Gen1,Wang Yu-Ying1,2,
Hu Qi-Feng1,
Zhang Yan-Bin1,
Peng Yong-Yi1,
Lei Hong-Wen2,
Peng Li-Ping2,
Wang Xue-Min2,
Wu Wei-Dong2
1.Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, China;
2.State Key Laboratory for High-Temperature and High-Density Plasmas Physics, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Fund Project:Project supported by the Foundation of the State Key Laboratory for High-Temperature and High-Density Plasmas Physics, China Academy of Engineering Physics (Grant No. 9140C680501110C6803) and the Fundamental Research Funds for the Central Universities, China (Grant No. ZY2015681).Received Date:08 October 2015
Accepted Date:23 December 2015
Published Online:05 March 2016
Abstract:Zn1-xCdxO/ZnO single quantum well is grown by laser molecular beam epitaxy on Al2O3(0001) substrate. Single quantum well samples respectively with the well-widths of 1.0 nm, 1.5 nm, 4 nm are obtained by controlling the epitaxial temperature and oxygen pressure in the vacuum chamber. The chemical compositions, surface morphologies, crystal structures of the samples are carefully studied, and the results show that the Zn0.98Cd0.02O single quantum wells are of high quality with very smooth surface (with the root mean square value of 0.6 nm in 20 μm×20 μm area) and good crystal structure. Quite a strong photoluminescence emission is obtained at 3.158-3.219 eV from the ZnCdO single quantum well at 4 K under a 325 nm He-Cd laser by tuning quantum well-width. The full width of half maximum of the photoluminescence emission peak of the 1.0 nm quantum well reaches 60 meV, which indicates a strong quantum confinement effect.
Keywords: ZnCdO quantum well/
photoluminescence/
laser molecular beam epitaxy/
quantum-confinement effect
