Email: chenjy@iccas.ac.cn

 

    个人简历：

     1979年3月出生

     2013年1月中国科学院化学研究所博士学位

     2013年5月-2018年3月新加坡国立大学博士后

     2018年3月-至今中国科学院化学研究所研究员，博士生导师

 

    研究领域：

     石墨烯材料与器件；

     有机二维原子晶体的设计与合成；

     有机二维电子学；

 

     代表论文：

1.    Chen, J., Zhao, X.,Grinblat,G.,Chen, Z., Tan, S. J. R.,Fu, W., Ding, Z., Abdelwahab, I., Li, Y., Geng, D., Liu, Y., Leng, K., Liu, B.,Liu, W., Tang, W., Maier, S. A.,Pennycook, S. J.,Loh, K. P.* Homoepitaxial growth of large-scale highly organized transition metal dichalcogenide patterns. Adv. Mater.2018, 30, 1704674.

2.    Chen, J., Zhao, X., Tan, S. J. R., Xu, H., Wu, B., Liu, B., Fu, D., Fu, W., Geng, D., Liu, Y., Liu, W., Tang, W., Li, L., Zhou, W., Sum, T. C., Loh, K. P.* Chemical vapor deposition of large-size monolayer MoSe2 crystals on molten glass. J. Am. Chem. Soc.  2017, 139, 1073–1076.

3.    Chen, J., Liu, B., Liu, Y., Tang, W., Nai, C. T., Li, L., Zheng, J., Gao, L., Zheng, Y., Shin, H. S.,  Jeong, H. Y., Loh, K. P.* Chemical vapor deposition of large-sized hexagonal WSe2 crystals on dielectric substrates. Adv. Mater. 2015, 27, 6722–6727.

4.     Zheng, Y.1, Chen, J.1,Ng, M. -F., Xu, H., Liu, Y. P., Li, A., O'Shea, S. J., Dumitrică, T., Loh, K. P.* Quantum mechanical rippling of a MoS2 monolayer controlled by interlayer bilayer coupling. Phys. Rev. Lett. 2015, 114, 065501.

5.    Chen, J., Guo, Y., Wen, Y., Huang, L., Xue, Y., Geng, D., Wu, B., Luo, B., Yu, G., Liu, Y. * Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates. Adv. Mater.2013, 25, 992–997.

6.    Chen, J., Guo, Y., Jiang, L., Xu, Z., Huang, L., Xue, Y., Geng, D., Wu, B., Hu, W., Yu, G., Liu, Y.* Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates. Adv. Mater.2014, 26, 1348–1353.

7.    Chen, J., Wen, Y., Guo, Y., Wu, B., Huang, L., Xue, Y., Geng, D., Wang, D., Yu, G., Liu, Y., Oxygen-aided synthesis of polycrystalline grapheme on silicon dioxide substrates. J. Am. Chem. Soc.2011, 133, 17548–17551.