基本信息
尚大山男博导中国科学院微电子研究所
电子邮件： shangdashan@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码： 100029
部门/实验室：微电子重点实验室
研究领域
?围绕类脑计算领域的重要科学与技术问题，开展新型具有存算一体功能的神经形态信息器件材料、结构、机理和集成技术的研究，拓展神经形态器件在类脑计算中的应用，包括：
1.神经形态信息器件与集成
2.新型非易失性信息存储器件与集成
3.脉冲神经网络模型与算法及其相关的周边电路



招生信息每年招收一名博士和一名硕士

招生专业080903-微电子学与固体电子学
080501-材料物理与化学

招生方向神经形态信息存储器件与集成技术
新型高密度、低功耗、非易失性存储器件，类脑存储与计算信息功能器件，面向人工智能、大数据应用的神经形态功能电子器件与神经网络计算


教育背景2004-03--2007-07中国科学院上海硅酸盐研究所博士

学历
学位

工作经历
工作简历2018-10~现在,中国科学院微电子研究所,研究员
2014-03~2018-10,中国科学院物理研究所,副研究员
2013-11~2014-01,英国剑桥大学材料科学与冶金系,访问
2012-07~2014-03,德国亚琛工业大学物理系（IA),洪堡
2011-05~2012-04,韩国国立首尔大学物理与天文系,博士后
2009-07~2018-10,中国科学院物理研究所,副研究员
2007-08~2009-06,中国科学院物理研究所,博士后

社会兼职

教授课程

专利与奖励
奖励信息
专利成果

出版信息
发表论文（1）Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe22O22,Physics Review B,2018,第4作者
（2）Spin-induced multiferroicity in the binary perovskite manganite Mn2O3,Nature Communication,2018,第4作者
（3）All-solid-state synaptic transistor with ultralow conductance for neuromorphic computing,Advanced Functional Materials,2018,第2作者
（4）Mimic synaptic plasticity and neural network using memtranstors,Advanced Materials,2018,第2作者
（5）Room-temperature nonvolatile memory based on a single-phase multiferroic hexaferrite,Advanced Functional Materials,2018,第2作者
（6）基于磁电耦合效应的基本电路元件和非易失性存储器,物理学报,2018,第2作者
（7）Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites,Nature Communication,2017,第8作者
（8）Direct measurement of thermoelectric properties of β-MnO2 in its powder form,Applied Physics Letters,2017,第5作者
（9）A synaptic transistor based on quasi-two- dimensional molybdenum oxide,Advanced Materials,2017,第2作者
（10）Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells,Physical Chemistry Chemical Physics,2017,第2作者
（11）Realization of a flux-driven memtranstor at room temperature,Chinese Physics B,2016,第2作者
（12）A multilevel nonvolatile magnetoelectric memory,Scientific Report,2016,第3作者
（13）Nonvolatile memory based on nonlinear magnetoelectric effects,Physical Review Applied,2016,第4作者
（14）Quantum electric-dipole liquid on a triangular lattice,Nature Communication,2016,第7作者
（15）Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure,Physical Review Applied,2016,第2作者
（16）Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces,Physical Chemistry Chemical Physics,2016,第2作者
（17）Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures,Applied Physics Letters,2016,第2作者
（18）Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment,Solid State Ionics,2016,第1作者
（19）Towards the Complete Relational Graph of Fundamental Circuit Elements,Chinese Physics B,2015,第1作者
（20）Understanding the conductive channel evolution in Na:WO3-x-based planar devices,Nanoscale,2015,第1作者
（21）14)Resistance switching in oxides with inhomogeneous conductivity,Chinese Physics B,2013,第1作者
（22）Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems,Nanotechnology,2013,第2作者
（23）Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures,Applied Physics Letters,2013,第6作者
（24）Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials,Journal of Applied Physics,2012,第1作者
（25）Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices,Applied Physics Letters,2012,第4作者
（26）Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/MgZnO/Pt device,Journal of Physics D: Applied Physics,2012,第4作者
（27）Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films,Nanotechnology,2011,第1作者
（28）Roles of silver oxide in the bipolar resistance switching devices with silver electrode,Applied Physics Letters,2011,第2作者
（29）Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles,Journal of Physics D: Applied Physics,2011,第2作者
（30）Direct observation of local resistance switching in WO3 films,Journal of Physics D: Applied Physics,2011,第3作者
（31）Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure,Phys. Status Solidi (RRL),2010,第2作者
（32）Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing,Applied Physics Letters,2010,第1作者
（33）Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag-Al alloy top electrodes,Journal of Applied Physics,2010,第5作者
（34）Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions,Applied Physics Letters,2009,第1作者
（35）Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition,Journal of Applied Physics,2009,第1作者
（36）Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices,Applied Physics Express,2009,第2作者
（37）Electric pulse-induced resistance switching in (Bi2O3)0.7(Y2O3)0.3 films,Journal of Applied Physics,2009,第2作者
（38）The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions,Applied Physics Letters,2009,第5作者
（39）Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes,Journal of Applied Physics,2009,第2作者
（40）Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions,Applied Physics Letters,2008,第1作者
（41）Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states,Applied Physics Letters,2008,第1作者
（42）Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures,Journal of Material Research,2008,第1作者
（43）Asymmetric fatigue and its endurance improvement in resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures,Journal of Physics D: Applied Physics,2007,第1作者
（44）"Positive" and "negative" electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films,Applied Physics A: Material Science and Process,2007,第2作者
（45）Temperature dependence of current-voltage characteristics of Ag-La0.7Ca0.3MnO3-Pt heterostructures,Applied Physics Letters,2006,第1作者
（46）Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures,Physics Review B,2006,第1作者
（47）Resistance switching driven by polarity and voltage of electric pulse in Ag- La0.7Ca0.3MnO3-Pt sandwiches,Applied Physics A: Material Science and Process,2005,第4作者
（48）Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches,Applied Physics Letters,2005,第4作者

发表著作

科研活动
科研项目（ 1 ） 基于磁电耦合材料的新型信息存储器件研究, 主持,国家级,2017-01--2020-12
（ 2 ） 基于层状氧化物材料的神经突触晶体管, 主持,国家级,2019-01--2022-12
（ 3 ） 低维磁性材料、磁电耦合与器件, 主持,省级,2018-10--2021-10

参与会议

合作情况
项目协作单位

指导学生