基本信息
刘琦男硕导中国科学院微电子研究所
电子邮件： liuqi@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码： 100029
部门/实验室：微电子重点实验室
研究领域

招生信息
招生专业080903-微电子学与固体电子学
080901-物理电子学
085208-电子与通信工程

招生方向新型纳米存储器件与集成技术
新型非易失存储技术，微纳加工技术，原位表征技术
神经形态器件及类脑计算


教育背景2007-09--2010-06安徽大学（与中国科学院微电子研究所联合培养），电子科学与技术学院博士
2004-09--2007-06安徽大学，电子科学与技术学院硕士
1998-09--2002-07安徽大学，物理系本科

学历
学位

工作经历
工作简历2016-01~现在,中国科学院微电子研究所,研究员
2012-10~2016-01,中国科学院微电子研究所,副研究员
2012-08~2012-10,中国科学院微电子研究所,助理研究员
2010-10~2012-08,中国科学院微电子研究所,博士后
2007-01~2010-09,安徽大学，电子科学与技术学院,助教

社会兼职2012-01-20-今,IEEE Member,


教授课程

专利与奖励
奖励信息（1） 氧化物阻变存储器机理与性能调控, 二等奖, 国家级, 2016
（2） 中国电子协会科学技术奖, 一等奖, 其他, 2015
（3） 卢嘉锡青年人才奖, 部委级, 2015
（4） 北京市科学技术进步奖, 二等奖, 省级, 2014

专利成果（ 1 ） Resistive random access memory cell and memory, 发明, 2014, 第 1 作者, 专利号: US ** B2
（ 2 ） Metal oxide resistive switching memory and method for manufacturing same, 发明, 2014, 第 4 作者, 专利号: US 8,735,245 B2
（ 3 ） 二元过渡族金属氧化物非挥发电阻转变型存储器, 发明, 2010, 第 1 作者, 专利号: ZL 0.3
（ 4 ） 阻变型随机存储单元及存储器, 发明, 2014, 第 1 作者, 专利号: ZL 13
（ 5 ） 阻变存储器单元, 发明, 2015, 第 1 作者, 专利号: ZL 3.1
（ 6 ） 一种用于原位电学测试的透射电镜样品的制备方法, 发明, 2015, 第 1 作者, 专利号: ZL 3.4


出版信息
发表论文（1）Flexible cation-based threshold selector for resistive switching memory integration,Science China Information Sciences,2018,通讯作者
（2）Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing,Sci. China-Phys. Mech. Astron.,2018,第1作者
（3）Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films,IEEE Electron Devices Lett.,2018,通讯作者
（4）Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning,Advanced Functional Materials,2018,第6作者
（5）Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing,Advanced Functional Materials,2018,通讯作者
（6）Breaking current-retention dilemma in cation-based resistive switching device graphene with controlled defects,Advanced Materials,2018,通讯作者
（7）Investigation of retention behavior of TiOx/Al2O3 resistive memory and its failure mechanism based on Meyer-Neldel rule,IEEE Electron Devices Lett.,2018,第6作者
（8）Artificial neuron based on a threshold switching memristor,IEEE Electron Device Letters,2018,通讯作者
（9）Origin of negative resistance in anion migration controlled resistive memory,Appl. Phys. Lett.,2018,第6作者
（10）Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory,IEEE Electron Device Letters,2018,通讯作者
（11）Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition,Phys. Chem. Chem. Phys,2017,通讯作者
（12）HfO2-based highly stable radiation-hardened ferroelectric memory,IEEE Electron Devices Lett.,2017,通讯作者
（13）Crystal that remembers: Several ways to utilize nanocrystals in resistive switching memory,J. Phys. D: Appl. Phys.,2017,通讯作者
（14）Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics,Appl. Phys. Lett.,2017,第7作者
（15）Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials,Small,2017,第3作者
（16）A cell-based clustering model for the reset statistics in RRAM,Appl. Phys. Lett.,2017,第5作者
（17）Confining cation injection to enhance CBRAM performance by nanopore graphene layer,Small,2017,通讯作者
（18）Graphene and Related Materials for Resistive Random Access Memories,Advanced Electronics Materials,2017,第4作者
（19）Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt Memristor,IEEE Electron Devices Lett.,2017,通讯作者
（20）Uniformity and retention improvement of TaOx-based conductive bridge random access memory by CuSiN interfacial layer engineering,IEEE Electron Devices Lett.,2017,第7作者
（21）Electronic imitation of behavioral and psychological synaptic activities by the TiOx/Al2O3-based memristor devices,Nanoscale,2017,通讯作者
（22）Improvement of device reliability by introducing a BEOL-compatible TiN barrier layer in CBRAM,IEEE Electron Devices Lett.,2017,通讯作者
（23）Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates,Nano Research,2017,通讯作者
（24）Investigation on the conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo simulator,Scientific Reports,2017,第7作者
（25）Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM,Nanoscale,2017,第4作者
（26）Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing,Advanced Functional Materials,2017,通讯作者
（27）Design of high-performance memristor cell using W-implanted SiO2 films,Appl. Phys. Lett.,2016,通讯作者
（28）Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory,Advanced Materials,2016,通讯作者
（29）Epitaxial 2D PbS nanoplates arrays with highly efficient infrared response,Advanced Materials,2016,第4作者
（30）Analysis of the negative-set behaviors in Cu/ZrO2/Pt devices,Nanoscale Research Letters,2016,通讯作者
（31）Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology,Advanced Functional Materials,2014,通讯作者
（32）Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device,J. Appl. Phys.,2014,通讯作者
（33）In-situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory,Appl. Phys. Lett.,2013,第2作者
（34）Self-rectifying resistive switching device with a-Si/WO3 bilayer,IEEE Electron Devices Lett.,2013,第3作者
（35）Bipolar one diode-one resistor integration for high-density resistive memory applications,Nanoscale,2013,第3作者
（36）Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM,Advanced Materials,2012,第1作者
（37）Effect of low constant current stress treatment on the performance of Cu/ZrO2/Pt resistive switching device,Semicond. Sci. Technol.,2012,第2作者
（38）Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance,IEEE Electron Devices Lett.,2012,第3作者
（39）Programming Resistive Switching Memory by a Charged Capacitor,Applied Physics A,2011,第2作者
（40）Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt Memory Cell,Applied Physics A,2011,第2作者
（41）Improved resistive switching uniformity in Cu/HfO2/Pt device by using current sweeping mode,IEEE Electron Devices Lett.,2011,第3作者
（42）Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using metal nanocrystal cover bottom electrode,ACS Nano,2010,第1作者
（43）Low power and highly uniform switching in ZrO2-based ReRAM with a Cu nanocrystal insertion layer,IEEE Electron Devices Lett.,2010,第1作者
（44）nvestigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications,Nanotechnology,2010,第2作者
（45）Resistive switching properties of Au/ZrO2/Ag structure for low voltage nonvolatile memory applications,IEEE Electron Devices Lett.,2010,第4作者
（46）ZrO2-based memory cell with a self-rectifying effect for crossbar WORM memory application,IEEE Electron Devices Lett.,2010,第4作者
（47）Highly stable radiation hardened resistive switching memory,IEEE Electron Devices Lett.,2010,第4作者
（48）Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device,Appl. Phys. Lett.,2009,第1作者
（49）Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions,IEEE Electron Devices Lett.,2009,第1作者
（50）Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application,Nano Lett.,2009,第3作者
（51）Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory,J. Appl. Phys.,2009,第3作者
（52）Resistive switching memory effect of ZrO2 films with Zr+ implanted,Appl. Phys. Lett.,2008,第1作者
（53）Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application,J. Appl. Phys.,2008,第1作者
（54）Nonpolar nonvolatile resistive switching in Cu doped ZrO2,IEEE Electron Devices Lett.,2008,第3作者
（55）On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt,Appl. Phys. Lett.,2008,第4作者
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发表著作

科研活动
科研项目（ 1 ） 阻变存储器, 主持,国家级,2015-01--2017-12
（ 2 ） 适用于三维集成的阻变存储器选通管技术研究, 主持,国家级,2015-01--2018-12
（ 3 ） 基于忆阻器的大规模神经网络的类脑计算架构研究, 主持,国家级,2018-01--2022-12
（ 4 ） 新型高密度存储材料与器件, 主持,国家级,2017-07--2021-06
（ 5 ） 阻变器件机理与性能调控, 主持,国家级,2019-01--2023-12

参与会议（1）Multimode of resistive switching behaviors in Ag/SiO2/Pt device51.Qi Liu, Haitao Sun, Hangbing Lv, Shibing Long and Ming Liu*2015-10-11


合作情况
项目协作单位

指导学生现指导学生
吴祖恒硕士研究生080903-微电子学与固体电子学
吴书毓硕士研究生080903-微电子学与固体电子学
曹守政硕士研究生085208-电子与通信工程
李悦博士研究生080903-微电子学与固体电子学
娄凯华硕士研究生080903-微电子学与固体电子学
张续猛博士研究生080903-微电子学与固体电子学