王如志：
北京工业大学材料科学与工程学院教授、博士生导师，功能材料与器件研究所副所长/实验室主任，获得了北京市科技新星、北京市青年拔尖人才及北京工业大学京华人才等人才计划称号。美国麻省理工学院访问、日本产业综合技术研究所特别研究员、香港中文大学研究助理及香港城市大学访问研究员等多家国际知名院所的留学访问经历。在半导体低维纳米材料的设计与预测、新能源材料设计与应用、新型纳米场发射材料制备与器件应用等研究领域上取得了一系列具有良好科学意义与应用价值的科研成果。所培养的1名博士曾获北京市优秀博士论文及全国优秀博士论文提名奖。已在国际学术刊物上发表SCI收录论文130多篇，其中，以第一或通讯作者发表的SCI收录一、二区论文50多篇。第一发明人国家授权发明专利21项。主持了包括国家重点研发计划子课题、5项国家自然科学基金、北京市科技新星计划及北京市自然科学基金等科研项目10余项,作为骨干参与国家重大专项、国家自然科学基金重点基金等科研项目多项。


主要研究方向：
1）新型低维光&电能源材料结构设计与性能预测
2）低维氮化物半导体材料制备、性能及其物理机理研究
3）低维柔性纳米传感材料设计、制备及器件应用




联系方式：

E-mail: wrz@bjut.edu.cn
联系电话：（010）** (office)
实验室主页：http://qmlab.bjut.edu.cn



专著出版:
王如志、严辉 纳米半导体场发射冷阴极理论与实验，科学出版社（2017.1）
王如志、刘维、刘立英 半导体材料，清华大学出版社（2019.12）

第一或通讯作者代表学术论文:
Coupling enhanced growth by nitrogen and hydrogen plasma of carbon nanotubes, Crystengcomm 21, 4653 (2019).
Enhancement mechanism of H2 sensing in metal-functionalized GaN nanowires, Appl. Surf. Sci. 486, 212 (2019).
C3N/phosphorene heterostructure: a promising anode material in lithium-ion batteries, J. Mater. Chem. A 7, 2106 (2019).
Trap effects on vacancy defect of C3N as anode material in Li-ion battery, Appl. Surf. Sci. 475, 102 (2019).
Direct Growth of GaN Nanowires by Ga and N2 without Catalysis, Crystal Growth & Design 19, 2687 (2019).
Oxygen vacancy effect on photoluminescence of KNb3O8 nanosheets, Appl. Surf. Sci. 439, 983 (2018).
Assembled graphene nanotubes decorated by hierarchical MoS 2 structures: Enhanced lithium storage and in situ TEM lithiation study, Energy Storage Materials 9, 188 (2017).
Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition, J. Phys. Chem. C 121, 24804 (2017).
Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes. Sci Rep 7, 43625, 43625 (2017).
Ultra-Low Threshold Field Emission from Amorphous Bn Nanofilms. J. Alloy. Compd. J. Alloy. Compd. 705, 734 (2017).
Elastic Properties, Defect Thermodynamics, Electrochemical Window, Phase Stability, and Li+ Mobility of Li3PS4: Insights from First-Principles Calculations. Acs Applied Materials & Interfaces 8, 25229 (2016).
Engineering of hydrogenated two-dimensional h-BN/C superlattices as electrostatic substrates. Phys. Chem. Chem. Phys. 18, 974 (2016).
An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations. Phys. Chem. Chem. Phys. 18, 29239 (2016).
A low cost, green method to synthesize GaN nanowires. Sci Rep 5, 17692 (2015).
Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride. Phys. Chem. Chem. Phys. 17, 11692 (2015).
Self-templating noncatalyzed synthesis of monolithic boron nitride nanowires. RSC Adv. 5, 75810 (2015).
Two dimensional Dirac carbon allotropes from graphene, Nanoscale 6 (2), 1113 (2014).
Si Doping at GaN Inversion Domain Boundaries: an Interfacial Polar Field for Electrons and Holes Separation. J. Mater Chem. A, 2, 9744（2014）.
Crystallization Effects of NanocrystallineGaN Films on Field Emission. J. Phys. Chem. C 117, 1518-1523 (2013).
1From powder to nanowire: a simple and environmentally friendly strategy for optical and electrical GaN nanowire films. Crystengcomm 15, 1626-1634 (2013).
Wurtzite-type CuInSe2 for high-performance solar cell absorber: ab initio exploration of the new phase structure. J. Mater. Chem. 22, 21662-21666 (2012)
Giant magnetoresistance effect in graphene with asymmetrical magnetic superlattices. Appl. Phys. Lett. 101, 152404 (2012).
Order Structures of AlxGa1-xN Alloys: First-Principles Predictions. J. Phys. Chem. C 116, 1282-1285 (2012).
Enhanced Field Emission from GaN and AlN Mixed-Phase Nanostructured Film J. Phys. Chem. C 116 (2), 1780-1783 (2012).
Electron field emission enhanced by geometric and quantum effects from nanostructured AlGaN/GaN quantum wells. Appl. Phys. Lett. 98, 152110 (2011).
Strain-induced negative differential resistance in armchair-edge graphenenanoribbons. Appl. Phys. Lett. 98, 082108 (2011).
Field Emission Enhancement in Semiconductor Nanofilms by Engineering the Layer Thickness: First-Principles Calculations. J. Phys. Chem. C 114, 11584-11587 (2010).
Ultra-Low-Threshold Field Emission from Oriented Nanostructured GaN Films on Si Substrate. Appl. Phys. Lett. 96(9), 092101(2010).
Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode. Appl. Phys. Lett. 92(14), 142102 (3) (2008)
Spin transport in an asymmetrical magnetic superlattice. Phys. Rev. B 74(2), 024417 (5) (2006).
Strain-induced Raman-mode shift in single-wall carbon nanotubes: Calculation of force constants from molecular-dynamics simulations. Phys. Rev. B 77(19), 195440 (5) (2008).
Anomalous pressure behavior of tangential modes in single-wall carbon nanotubes. Phys. Rev. B. 76（3）, 033402 (4) (2007).
Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes. Phys. Rev. B 2007, 75(4), 045425 (5) (2007).
Structural enhancement mechanism of field emission from multilayer semiconductor films. Phys. Rev. B, 72(12), 125310 (6) ( 2005).
Multipeak characteristics of field emission energy distribution from semiconductors. Phys. Rev. B, 70（19），195305 (6) (2004)
Band Bending Mechanism for Field Emission in Wide Band Gap Semiconductors. Appl. Phys. Lett., 81(15), 2782～2784 (2002).