姓　　　名: 殷月伟
地　　　址: 中国科学技术大学理化大楼6011室
邮　　　编: 230026
电　　　话:
电　　　邮: yyw@ustc.edu.cn
实验室介绍: http://emdp.ustc.edu.cn/

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　教育与科研经历
2003-2007
学士(物理)，中国科学技术大学
2007-2012
博士(物理)，中国科学技术大学
2009-2011
联合培养博士生(物理)，宾州州立大学
2012-2013
特任助理研究员，中国科学技术大学
2013-2017
特任副研究员，中国科学技术大学
2013-2015
博士后，宾州州立大学
2015-2017
博士后，内布拉斯加大学林肯分校
2017-至今
特任教授，中国科学技术大学


　目前研究方向
　　 磁电耦合异质结，钙钛矿关联电子材料，多铁与自旋电子学


　代表性论文
1.
Zhiwei Chen, Weichuan Huang, Wenbo Zhao, Chuangming Hou, Chao Ma, Chuanchuan Liu, Haoyang Sun, Yuewei Yin* and Xiaoguang Li*, Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM. Adv. Electron. Mater. 5, ** (2019). (Issue inside cover)
2.
Weichuan Huang, Yuewei Yin* and Xiaoguang Li*, Atomic-scale mapping of interface reconstructions in multiferroic heterostructures. Appl. Phys. Rev. 5, 041110 (2018). (Featured article)
3.
Wenbo Zhao, Weichuan Huang, Chuanchuan Liu, Chuangming Hou, Zhiwei Chen, Yuewei Yin* and Xiaoguang Li*, Electric-Field-Controlled Nonvolatile Magnetization Rotation and Magnetoresistance Effect in Co/Cu/Ni Spin Valves on Piezoelectric Substrates. ACS Appl. Mater. Interfaces 10, 21390-21397 (2018).
4.
W. Huang, Y. W. Fang,Yuewei Yin*, B. Tian, W. Zhao, C. Hou, C. Ma, Q. Li, E. Y. Tsymbal, C. G. Duan* and X. Li*, Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.ACS Appl. Mater. Interfaces10, 5649-5656 (2018).
5.
Weichuan Huang, Wenbo Zhao, Zhen Luo,Yuewei Yin*, Yue Lin, Chuangming Hou, Bobo Tian, Chun-Gang Duan, and Xiao-Guang Li*, A High-speed and Low-power Multistate Memory Based on Multiferroic Tunnel Junction.Adv. Electron. Mater.** (2018)
6.
C. M. Hou, W. C. Huang, W. B. Zhao, D. L. Zhang,Yuewei Yin*and X. G. Li*, Ultrahigh Energy Density in SrTiO₃ Film Capacitors.ACS Appl. Mater. Interfaces9, 20484-20490 (2017).
7.
Yuewei Yin*and Q. Li*, A review on all-perovskite multiferroic tunnel junctions. J. Materiomics 3, 245-254 (2017).
8.
W. C. Huang, Y. Lin,Y. W. Yin*, L. Feng, D. L. Zhang, W. B. Zhao, Q. Li and X. G. Li*, Interfacial Ion Intermixing Effect on Four-Resistance States in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ Multiferroic Tunnel Junctions.ACS Appl. Mater. Interfaces8, 10422-10429 (2016).
9.
Y.-W. Yin, W.-C. Huang, Y.-K. Liu, S.-W. Yang, S.-N. Dong, J. Tao, Y.-M. Zhu, Q. Li* and X.-G. Li*, Octonary Resistance States in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃Multiferroic Tunnel Junctions.Adv. Electron. Mater.1, ** (2015).
10.
Y. W. Yin, J. D. Burton, Y. M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, A. Gruverman, X. G. Li, E. Y. Tsymbal* and Q. Li*, Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.Nature Mater.12, 397-402 (2013).